Display device

ABSTRACT

A display device according to an embodiment includes: a substrate; a light emitting element which is disposed on the substrate, and includes a first electrode, an emission layer, and a second electrode; a reflective layer which is disposed on the light emitting element, and includes an inorganic material; an encapsulation layer which is disposed on the reflective layer; a light blocking layer which is disposed on the encapsulation layer, and defines an opening overlapping the emission layer in a plan view; a reflection adjusting layer which is disposed on the light blocking layer; and a first organic layer which is disposed on the reflection adjusting layer, and defines an opening overlapping the emission layer in the plan view.

This application claims priority to Korean Patent Application No.10-2021-0118246, filed on Sep. 6, 2021, and all the benefits accruingtherefrom under 35 U.S.C. § 119, the content of which in its entirety isherein incorporated by reference.

BACKGROUND (a) Field

Embodiments of the present invention relate to a display device, andmore particularly, they relate to a display device of whichtransmittance is improved in an element area.

(b) Description of the Related Art

As a device that displays a screen, a display device includes a liquidcrystal display (“LCD”), an organic light emitting diode display(“OLED”), and the like. Such a display device is used in variouselectronic devices such as portable phones, navigation devices, digitalcameras, electronic books, portable game machines, or various terminals.

The above information disclosed in this Background section is only forenhancement of understanding of the background of the invention, andtherefore it may contain information that does not form the prior artthat is already known in this country to a person of ordinary skill inthe art.

SUMMARY

Embodiments of the present invention are to provide a display devicehaving improved transmittance in a certain area by removing thereflection adjusting layer from the certain area, and covering it withan organic layer. However, these tasks are exemplary, and the scope ofthe present invention is not limited thereby.

A display device according to an embodiment includes: a substrate; alight emitting element which is disposed on the substrate, and includesa first electrode, an emission layer, and a second electrode; areflective layer which is disposed on the light emitting element, andincludes an inorganic material; an encapsulation layer which is disposedon the reflective layer; a light blocking layer which is disposed on theencapsulation layer, and defines a 2-1 opening overlapping the emissionlayer in a plan view; a reflection adjusting layer which is disposed onthe light blocking layer; and a first organic layer which is disposed onthe reflection adjusting layer, and defines an opening overlapping theemission layer in the plan view.

The display device may include: a display area and a peripheral areawhich surrounds the display area, and the display area may include afirst element area and a second element area.

The display device may further include: a pixel defining layer which isdisposed on the substrate, and includes a light blocking material, andthe pixel defining layer may define: a 1-1 opening overlapping at leasta part of the first electrode in the plan view; a 1-2 openingoverlapping the first element area in the plan view; and a 1-3 openingoverlapping the second element area in the plan view.

The light blocking layer may define: the 2-1 opening overlapping the 1-1opening in the plan view; a 2-2 opening overlapping the 1-2 opening inthe plan view; and a 2-3 opening overlapping the 1-3 opening in the planview.

The reflection adjusting layer may define a 3-1 opening overlapping thefirst element area in the plan view and a 3-2 opening overlapping thesecond element area in the plan view.

The first organic layer may be disposed in the 3-1 opening.

The first organic layer may be disposed in the 3-2 opening.

The display device may further include a spacer disposed on the pixeldefining layer.

The display device may further include a second organic layer disposedon the first organic layer, and a refractive index of the second organiclayer may be greater than a refractive index of the first organic layer.

The first organic layer may overlap the entire surface of the substratein the plan view.

The reflective layer may include ytterbium (Yb), bismuth (Bi), cobalt(Co), molybdenum (Mo), titanium (Ti), zirconium (Zr), aluminum (Al),chromium (Cr), niobium (Nb), platinum (Pt), tungsten (W), indium (In),tin (Sn), iron (Fe), nickel (Ni), tantalum (Ta), manganese (Mn), zinc(Zn), germanium (Ge), silver (Ag), magnesium (Mg), gold (Au), copper(Cu), calcium (Ca), or a combination thereof.

The reflective layer may overlap a front surface of the substrate in theplan view.

The reflective layer may define an opening which overlaps at least oneof the first element area and the second element area in the plan view.

The reflection adjusting layer may selectively absorb a first wavelengthregion and a second wavelength region in a visible light region, and thefirst wavelength region may be 480 nanometers (nm) to 505 nm, and thesecond wavelength region may be 585 nm to 605 nm.

A display device according to an embodiment includes: a substratecomprising a display area and a peripheral area; a light emittingelement which is disposed on the substrate, and includes a firstelectrode, an emission layer, and a second electrode; a pixel defininglayer which overlaps at least a part of the first electrode in the planview, and includes a light blocking material; a reflective layer whichis disposed on the second electrode, and contains an inorganic material;an encapsulation layer which is disposed on the reflective layer; alight blocking layer which is disposed on the encapsulation layer; and areflection adjusting layer and a first organic layer which are disposedon the light blocking layer.

The display device may include a first element area and a second elementarea which are disposed in the display area.

The reflection adjusting layer may be spaced apart from the firstelement area and at least a part of the second element area in the planview.

The first organic layer may overlap the first element area and thesecond element area in the plan view, and the pixel defining layer andthe light blocking layer may be spaced apart from the first element areaand the at least a part of the second element area in the plan view.

The reflective layer may overlap a front surface of the substrate in theplan view.

The reflective layer may define an opening which overlaps the firstelement area and an opening which overlaps the second element area inthe plan view.

According to the embodiments of the present invention, it is possible toimplement a display device having improved transmittance in the firstelement area and the second element area. The scope of the presentinvention is not limited by such an effect.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic perspective view that illustrates a use state of adisplay device according to an embodiment.

FIG. 2 is an exploded perspective view of the display device accordingto the embodiment.

FIG. 3 is a block diagram of the display device according to theembodiment.

FIG. 4 is a schematic perspective view of a display device according toanother embodiment.

FIG. 5 is a top plan view of some constituent elements of the displaypanel according to the embodiment.

FIG. 6 is a circuit diagram of a pixel included in the display panelaccording to the embodiment.

FIG. 7 is a cross-sectional view of configurations arranged in thedisplay area.

FIG. 8 is a top plan view of some configurations of the display areaaccording to the embodiment.

FIG. 9A is a cross-sectional view of constituent elements disposed inthe display area and the first element area.

FIG. 9B is a top plan view of some configurations of the display areaand the first element area according to the embodiment.

FIG. 10A is a cross-sectional view of constituent elements disposed inthe second element area.

FIG. 10B is a top plan view of some configurations of the second elementarea.

FIG. 11A is a cross-sectional view of a first element area of a displaydevice according to another embodiment.

FIG. 11B is a cross-sectional view of a second element area according toanother embodiment.

FIG. 12A is a cross-sectional view of a display area of a display deviceaccording to still another embodiment.

FIG. 12B is a cross-sectional view of a display device including a firstelement area according to still another embodiment.

FIG. 12C is a cross-sectional view of the display device including asecond element area according to still another embodiment.

FIG. 13A is a cross-sectional view of a display device including a firstelement area according to yet another embodiment.

FIG. 13B is a cross-sectional view of a display device including asecond element area according to yet another embodiment.

DETAILED DESCRIPTION

The present invention will be described more fully hereinafter withreference to the accompanying drawings, in which embodiments of theinvention are shown. As those skilled in the art would realize, thedescribed embodiments may be modified in various different ways.

The drawings and description are to be regarded as illustrative innature and not restrictive. Like reference numerals designate likeelements throughout the specification.

In addition, since the size and thickness of each configuration shown inthe drawings are arbitrarily indicated for better understanding and easeof description, the present invention is not necessarily limited to thedrawings. In the drawings, the thickness of layers, films, panels,regions, etc., are exaggerated for clarity. In addition, in thedrawings, the thickness of some layers and regions is exaggerated forbetter understanding and ease of description.

It will be understood that when an element such as a layer, film,region, or substrate is referred to as being “on” another element, itcan be directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” another element, there are no intervening elements present. It willbe understood that when an element such as a layer, film, region, orsubstrate is referred to as being “on” another element, it can bedirectly on the other element or intervening elements may also bepresent.

In addition, unless explicitly described to the contrary, the word“comprise”, and variations such as “comprises” or “comprising”, will beunderstood to imply the inclusion of stated elements but not theexclusion of any other elements.

Further, throughout the specification, the phrase “on a plane” meansviewing a target portion from the top (i.e., in a third direction DR3,in a plan view), and the phrase “on a cross-section” means viewing across-section formed by vertically cutting a target portion from theside.

Hereinafter, a schematic structure of a display device will be describedwith reference to FIG. 1 to FIG. 3 . FIG. 1 is a schematic perspectiveview that illustrates a use state of a display device according to anembodiment, FIG. 2 is an exploded perspective view of the display deviceaccording to the embodiment, and FIG. 3 is a block diagram of thedisplay device according to the embodiment.

Referring to FIG. 1 , a display device 1000 according to an embodimentis a device for displaying a motion picture or a still image, and may beused as a display screen of various products including not only aportable electronic device such as a mobile phone, a smart phone, atablet personal computer (“PC”), a mobile communication terminal, anelectronic notebook, an e-book, a portable multimedia player (PMP), anavigation, an ultra mobile PC (“UMPC”), and the like. In addition, thedisplay device 1000 according to the embodiment may be used in awearable device such as a smart watch, a watch phone, glasses display,and a head mounted display (“HMD”). In addition, the display device 1000according to the embodiment may be used as a display of an instrumentpanel (substrate) of a car, a center fascia of the car or a centerinformation display (“CID”) disposed on the dashboard, a rearview mirrorin place of the car's rearview a room mirror display, and a displaydisposed at a rear seat of the car for entertainment. FIG. 1 shows thata display device 1000 is used as a smart phone for better comprehensionand ease of description.

The display device 1000 may display an image toward a third directionDR3 on a display plane that is parallel with a first direction DR1 and asecond direction DR2. The display plane where an image is displayed maycorrespond to a front surface of the display device 1000, and maycorrespond to a front surface of a cover window WU. The image mayinclude static images as well as dynamic images.

In the present embodiment, a front surface (in other words, top surface)and a rear surface (in other words, back surface) of each member aredefined with reference to a direction (i.e., the third direction DR3) ofdisplaying an image. The front surface and the bottom surface opposeeach other in the third direction DR3, and a normal direction of each ofthe front and the rear surfaces may be parallel to the third directionDR3. A separation distance in the third direction DR3 between the frontand rear surfaces may correspond to a thickness of the display panel inthe third direction DR3.

The display device 1000 according to the embodiment may sense an inputof a user (refer to the hand in FIG. 1 ) applied from the outside. Theinput of the user may include various types of external inputs such as apart of user's body, light, heat, or pressure. In the embodiment, theuser's input is shown with the user's hand applied to the front.However, the present invention is not limited thereto. The user's inputmay be provided in various forms, and the display device 1000 may alsosense the user's input applied to the side or rear surface of thedisplay device 1000 according to the structure of the display device1000.

Referring to FIG. 1 and FIG. 2 , the display device 1000 may include acover window WU, a housing HM, a display panel DP, and an opticalelement ES. In the embodiment, the cover window WU and the housing HMare coupled to form an external appearance of the display device 1000.

The cover window WU may include an insulation panel. For example, thecover window WU may be made of glass, plastic, or a combination thereof.

The front of the cover window WU may define a front of the displaydevice 1000. The transmissive area TA may be an optically transparentregion. For example, the transmissive area TA may be a region having avisible ray transmittance of about 90% or more.

A blocking area BA may define a shape of the transmissive area TA. Theblocking area BA is adjacent to the transmissive area TA and maysurround the transmissive area TA. The blocking area BA may be a regionhaving relatively low light transmittance compared to the transmissivearea TA. The blocking area BA may include an opaque material that blockslight. The blocking area BA may have a predetermined color. The blockingarea BA may be defined by a bezel layer provided separately from atransparent substrate defining the transmissive area TA, or may bedefined by an ink layer formed by inserting or coloring the transparentsubstrate.

The display panel DP may include a display area DA for displaying animage, and a data driver 50. The display panel DP may include a frontsurface including the display area DA and a peripheral area PA. Thedisplay area DA may be a region in which a pixel operates and emitslight according to an electrical signal.

In the embodiment, the display area DA may be a region in which pixelsare included and an image is displayed, and simultaneously may be aregion in which a touch sensor is positioned on an upper side of thepixel in the third direction and an external input is sensed.

The transmissive area TA of the cover window WU may at least partiallyoverlap the display area DA of the display panel DP in the plan view.For example, the transmissive area TA may overlap the front surface ofthe display area DA or may overlap at least a portion of the displayarea DA in the plan view. Accordingly, the user may recognize an imagethrough the transmissive area TA or provide an external input based onthe image. However, the present invention is not limited thereto. Forexample, in the display area DA, a region where an image is displayedand a region where an external input is sensed may be separated fromeach other.

The peripheral area PA of the display panel DP may at least partiallyoverlap with the blocking area BA of the cover window WU in the planview. The peripheral area PA may be a region covered by the blockingarea BA. The peripheral area PA is adjacent to the display area DA andmay surround the display area DA. An image is not displayed in theperipheral area PA, and a driving circuit or driving wiring for drivingthe display area DA may be disposed. The peripheral area PA may includea first peripheral area PA1 in which the display area DA is positionedoutside, and a second peripheral area PA2 including a data driver 50,and connection wiring, and a bending region. In the embodiment of FIG. 2, the first peripheral area PA1 is disposed at three sides of thedisplay area DA, and the second peripheral area PA2 is disposed at therest side of the display area DA.

In the embodiment, the display panel DP may be formed by assembling thedisplay area DA and the peripheral area PA in a flat state, facing thecover window WU. However, the present invention is not limited thereto.The peripheral area PA of the display panel DP may be partially bent. Inthis case, a portion of the peripheral area PA faces the rear surface ofthe display device 1000, and thus the blocking area BA shown on thefront surface of the display device 1000 may be reduced, and in FIG. andin 2, the second peripheral area PA2 is bent, positioned on the backside of the display area DA, and then assembled.

In addition, the display panel DP may include an element area EA, andthe element area EA may include a first element area EA1 and a secondelement area EA2. The first element area EA1 and the second element areaEA2 may be at least partially surrounded by the display area DA.Although the first element area EA1 and the second element area EA2 areillustrated as being spaced apart from each other, the present inventionis not limited thereto, and at least part of them may be connected inanother embodiment. The first element area EA1 and the second elementarea EA2 may be regions in which components using infrared rays, visibleray, sound, or the like are disposed thereunder.

In the display area DA, a plurality of light emitting elements, and aplurality of pixel circuit portions that generate light emitting currentand transmitting to the plurality of light emitting elements are formed.Here, one light emitting element and one pixel circuit portion arereferred to as a pixel PX. In the display area DA, one pixel circuitportion and one light emitting element are formed one-to-one.

The first element area EA1 includes a region formed of a transparentlayer through which light can be transmitted, and may have a structurethat does not block light by including a pixel defining layer (e.g.,PDL) or light blocking layer (e.g., BM), which includes a light blockingmaterial, and defines an opening overlapping a position corresponding tothe first element area EA1 in the plan view such that light is notblocked.

The second element area EA2 may include a display portion LDA thatincludes a transmissive portion through which light or/and sound can betransmitted, and a plurality of pixels. The transmissive portion ispositioned between adjacent pixels and is formed of a transparent layerthrough which light and/or sound can pass. The display portion LDA mayhave one unit structure by adding a plurality of pixels, and atransmissive portion may be positioned between adjacent unit structures.The second element area EA2 will be described in detail with referenceto FIG. 10A and FIG. 10B.

Referring to FIG. 3 together with FIG. 1 and FIG. 2 , the display panelDP may include the display area DA where a display pixel is included,and a touch sensor TS. The display panel DP includes pixels that createsan image, and thus may be visually recognized by the user from theoutside through the transmissive area TA. In addition, the touch sensorTS may be positioned on an upper portion of the pixel, and may sense anexternal input applied from the outside. The touch sensor TS may sensean external input provided to the cover window WU.

Referring back to FIG. 2 , the second peripheral area PA2 may include abending portion. The display area DA and the first peripheral area PA1may have a flat state while substantially being parallel with a planethat is defined by the first direction DR1 and the second direction DR2,and one side of the second peripheral area PA2 may extend from a flatstate and have a flat state again after going through a bending part. Asa result, at least a part of the second peripheral area PA2 may be bentand assembled to be positioned on the rear side of the display area DA.At least a part of the second peripheral area PA2 overlaps the displayarea DA on a plane when being assembled, and thus the blocking area BAof the display device 1000 may be reduced. However, the presentinvention is not limited thereto. For example, the second peripheralarea PA2 may not be bent in another embodiment.

The data driver 50 may be mounted on the second peripheral area PA2, andmay be mounted on the bending portion or positioned at one of both sidesof the bending portion. The data driver 50 may be provided in the formof a chip.

The data driver 50 may be electrically connected to the display area DAto transmit an electrical signal to the display area DA. For example,the data driver 50 may provide data signals to pixels PX disposed to thedisplay area DA. Alternatively, the data driver 50 may include a touchdriving circuit and may be electrically connected to the touch sensor TSdisposed in the display area DA. Meanwhile, the data driver 50 mayinclude various circuits in addition to the above-described circuits ormay be designed to provide various electrical signals to the displayarea DA.

The display device 1000 may have a pad portion positioned at an end ofthe second peripheral area PA2, and may be electrically connected to aflexible printed circuit board (“FPCB”) including a driving chip by thepad portion. Here, the driving chip positioned on the flexible printedcircuit board may include various driving circuits for driving thedisplay device 1000 or connectors for power supply. Depending onembodiments, a rigid printed circuit board (“PCB”) may be used insteadof a flexible printed circuit substrate.

The optical element ES may be disposed under the display panel DP. Theoptical element ES may include a first optical element ES1 overlappingthe first element area EA1 and a second optical element ES2 overlappingthe second element area EA2 in the plan view.

The first optical element ES1 may be an electronic element using lightor sound. For example, the first optical element ES1 is a sensor thatreceives and uses light like an infrared sensor, a sensor that outputsand senses light or sound to measure a distance or recognizes afingerprint, a small lamp that outputs light, or a speaker that outputsa sound. In the case of an electronic element using light, light ofvarious wavelength bands such as visible light, infrared light, andultraviolet ray light can be used.

The second optical element ES2 may be at least one of a camera, aninfrared (“IR”) camera, a dot projector, an infrared illuminator, and atime-of-flight (“ToF”) sensor.

Referring to FIG. 3 , the display device 1000 may include the displaypanel DP, a power supply module PM, a first electronic module EM1, and asecond electronic module EM2. The display panel DP, the power supplymodule PM, the first electronic module EM1, and the second electronicmodule EM2 may be electrically connected to each other. In FIG. 3 ,among the configuration of the display panel DP, the display pixel andthe touch sensor TS positioned in the display area DA are shown as anexample.

The power supply module PM may supply power required for the overalloperation of the display device 1000. The power supply module PM mayinclude a conventional battery module.

The first electronic module EM1 and the second electronic module EM2 mayinclude various functional modules for operating the display device1000. The first electronic module EM1 may be directly mounted on themotherboard electrically connected to the display panel DP or mounted ona separate substrate and electrically connected to the motherboardthrough a connector (not shown).

The first electronic module EM1 may include a control module CM, awireless communication module TM, an image input module IIM, an audioinput module AIM, a memory MM, and an external interface IF. Some of themodules are not mounted on the motherboard, but may be electricallyconnected to the motherboard through the flexible printed circuit boardconnected thereto.

The control module CM may control the overall operation of the displaydevice 1000. The control module CM may be a microprocessor. For example,the control module CM activates or deactivates the display panel DP. Thecontrol module CM may control other modules such as the image inputmodule IIM or the audio input module AIM based on the touch signalreceived from the display panel DP.

The wireless communication module TM may transmit/receive a wirelesssignal with another terminal using a Bluetooth or Wi-Fi line. Thewireless communication module TM may transmit/receive voice signalsusing a general communication line. The wireless communication module TMincludes a transmitting portion TM1 that modulates and transmits asignal to be transmitted, and a receiving portion TM2 that demodulates areceived signal.

The image input module IIM may process the image signal and convert theprocessed image signal into image data that can be displayed on thedisplay panel DP.

The audio input module AIM may receive an external sound signal input bya microphone in a recording mode, a voice recognition mode, and the likeand convert it into electrical voice data.

The external interface IF may serve as an interface connected to anexternal charger, a wired/wireless data port, a card socket (e.g., amemory card, a SIM/UIM card), and the like.

The second electronic module EM2 may include an audio output module AOM,a light emitting module LM, a light receiving module LRM, a cameramodule CMM, and the like, and at least a part of these modules may bepositioned at a rear side of the display panel DP as an optical elementES as shown in FIG. 1 and FIG. 2 . As the optical element ES, a lightemitting module LM, a light receiving module LRM, and a camera moduleCMM may be included. In addition, the second electronic module EM2 maybe directly mounted on a mother board, or may be mounted to anadditional substrate and thus be electrically connected with the displaypanel DP through a connector (not shown), or may be electricallyconnected with the first electronic module EM1.

The audio output module AOM may convert audio data received from thewireless communication module TM or audio data stored in the memory MMand outputs the converted audio data to the outside.

The light emitting module LM may generate and output light. The lightemitting module LM may output infrared light. For example, the lightemitting module LM may include an LED element. For example, the lightreceiving module LRM may sense infrared light. The light receivingmodule LRM may be activated when infrared light above a predeterminedlevel is detected. The light receiving module LRM may include a CMOSsensor. After the infrared light generated by the light emitting moduleLM is output, the light is reflected by an external subject (e.g., auser's finger or face), and the reflected infrared light can be incidenton the light receiving module LRM. The camera module CMM may take anexternal image.

In the embodiment, the optical element ES may additionally include aphotosensitive sensor or a thermal sensor. The optical element ES maydetect an external object received through the front surface or mayprovide a sound signal such as voice through the front surface to theoutside. In addition, the optical element ES may include a plurality ofconfigurations, and is not limited to any one embodiment.

Referring back to FIG. 2 , the housing HM may be combined with the coverwindow WU. The cover window WU may be disposed in front of the housingHM. The housing HM may be combined with the cover window WU to provide apredetermined accommodation space. The display panel DP and the opticalelement ES may be accommodated in a predetermined receiving spaceprovided between the housing HM and the cover window WU.

The housing HM may contain a material with relatively high stiffness.For example, the housing HM may include a plurality of frames and/orplates made of glass, plastic, or metal, or a combination thereof. Thehousing HM may reliably protect the components of the display device1000 accommodated in the interior space from external impact.

Hereinafter, referring to FIG. 4 , a structure of a display device 1000according to another embodiment will be described. FIG. 4 is a schematicperspective view of a display device according to another embodiment. Adescription of the above-described constituent element and the sameconfiguration will be omitted.

In the embodiment of FIG. 4 , a foldable display device with a structurein which the display device 1000 is folded along a folding line FAX isillustrated.

Referring to FIG. 4 , in the present embodiment, the display device 1000may be a foldable display device. The display device 1000 may be foldedoutwardly or inwardly based on the folding axis FAX. When folded outwardbased on the folding axis FAX, the display surface of the display device1000 is positioned on the outside in the third direction DR3, and thusimages can be displayed in both directions. When folded inward based onthe folding axis FAX, the display surface may not be visually recognizedfrom the outside.

In the embodiment, the display device 1000 may include a display areaDA, an element area EA, and a peripheral area PA. The display area DAmay be divided into a 1-1 display area DA1-1, a 1-2 display area DA1-2,and a folding area FA. The 1-1 display area DA1-1 and the 1-2 displayarea DA1-2 may be positioned on the left and right sides, respectively,based on (or at the center) of the folding axis FAX, and the foldingarea FA may be disposed between the 1-1 display area DA1-1 and the 1-2display area DA1-2. In this case, when folded outward based on thefolding axis FAX, the 1-1 display area DA1-1 and the 1-2 display areaDA1-2 are positioned on both sides in the third direction DR3, andimages can be displayed in both directions. In addition, when foldedinward based on the folding axis FAX, the 1-1 display area DA1-1 and the1-2 display area DA1-2 may not be visually recognized from the outside.

Hereinafter, a structure of the display panel DP will be described indetail with reference to FIG. 5 . FIG. 5 is a top plan view of someconstituent elements of the display panel according to the embodiment.

Referring to FIG. 5 , the display panel DP may include a display areaDA, an element area EA, and a peripheral area PA, and the peripheralarea PA may be defined along an edge of the display area DA.

The display panel DP includes a plurality of pixels PX. The plurality ofpixels PX may be disposed in the display area DA. Each pixel PX includesa light emitting element (e.g., a light emitting diode ED) and a pixelcircuit portion connected thereto. Each pixel PX emits light of forexample, red, green, and blue, or white, and may include, for example,an organic light emitting diode.

The display panel DP may include a plurality of signal lines and a padportion. The plurality of signal lines may include a scan line SLextending in a first direction DR1, and a data line DL and a drivingvoltage line PL extending in a second direction DR2.

The scan driver 20 is positioned on the left and right of the displayarea DA, and generates and transmits a scan signal to each pixel PXthrough the scan line SL. The pixel PX may receive scan signals from twoscan drivers 20 positioned on the left and right sides.

A pad portion PAD (hereinafter, also referred to as a pad portion for acircuit board) is disposed at one end of the peripheral area PA, and mayinclude a plurality of terminals P1, P2, P3, and P4. The pad portion PADmay be exposed without being covered by an insulating layer to beelectrically connected to a flexible printed circuit board FPCB. The padportion PAD may be electrically connected to a pad portion FPCB_P of theflexible printed circuit board FPCB. The flexible printed circuit boardFPCB may transmit a signal or power of an IC driving chip 80 to the padportion PAD.

The IC driving chip 80 converts a plurality of image signals transmittedfrom the outside into a plurality of image data signals, and transmitsthe changed signal to the data driver 50 through the terminal P1. Inaddition, the IC driving chip 80 receives a vertical synchronizationsignal, a horizontal synchronizing signal, and a clock signal, generatesa control signal to control the operation of the scan driver 20 and thedata driver 50, and transmits the control signal to each of the scandriver 20 and the data driver 50 through the terminals P3 and P1. The ICdriving chip 80 transmits a driving voltage ELVDD to a driving voltagesupply wiring 60 through the terminal P2. In addition, the IC drivingchip 80 may deliver a common voltage ELVSS to each of the common voltagesupply wirings 70 through the terminal P4.

The data driver 50 is disposed on the peripheral area PA, generates adata voltage DATA to be applied to each pixel PX, and transmits the datavoltage to each data line DL. The data driver 50 may be disposed at oneside of the display panel DP, and for example, may be disposed betweenthe pad portion PAD and the display area DA. Referring to FIG. 5 , adata line L connected to pixels PX excluding pixels disposed above andbelow the element area EA along the second direction DR2 may have astructure of a straight line that extends along the second directionDR2. On the contrary, a data line DL connected to pixels PX disposedabove and below the element area EA extends along the second directionDR2, but may include a portion extending along the periphery of theelement area EA at the periphery of the element area EA.

The driving voltage supply wiring 60 is disposed on the peripheral areaPA. For example, the driving voltage supply wiring 60 may be disposedbetween the data driver 50 and the display area DA. The driving voltagesupply wiring 60 provides a driving voltage ELVDD to the pixel PX. Thedriving voltage supply wiring 60 is aligned in the first direction DR1,and may be connected with a plurality of driving voltage lines PLarranged in the second direction DR2.

The common voltage supply wiring 70 is disposed on the peripheral areaPA. The common voltage supply wiring 70 may have a shape that surroundsa substrate SUB. The common voltage supply wiring 70 transmits a commonvoltage ELVSS to an electrode (e.g., a cathode) of a light emittingelement included in the pixel PX.

An example of a circuit structure of the pixel PX positioned on thedisplay panel DP as described above will be described with reference toFIG. 6 . FIG. 6 is a circuit diagram of a pixel included in the displaypanel according to the embodiment.

The circuit structure shown in FIG. 6 is a circuit structure of a pixelcircuit portion and a light emitting element disposed in the displayarea DA and a part of the element area EA.

A pixel according to the embodiment includes a plurality of transistorsT1, T2, T3, T4, T5, T6, and T7 connected to a plurality of wires 127,128, 151, 152, 153, 155, 171, 172, and 741, a storage capacitor Cst, aboost capacitor C_(boost), and a light emitting diode ED. Here, thetransistors and the capacitor, excluding the light emitting diode ED,form a pixel circuit portion. Depending on embodiments, the boostcapacitor C_(boost) can be omitted.

A plurality of wires 127, 128, 151, 152, 153, 155, 171, 172, and 741 areconnected to one pixel PX. The plurality of wires includes a firstinitialization voltage line 127, a second initialization voltage line128, a first scan line 151, a second scan line 152, an initializationcontrol line 153, a light emission control line 155, a data line 171, adriving voltage line 172, and a common voltage line 741. In anembodiment of FIG. 7 , the first scan line 151 connected with theseventh transistor T7 is also connected with the second transistor T2,but, depending on embodiments, unlike the second transistor T2, theseventh transistor T7 may be connected through a separate bypass controlline.

The first scan line 151 is connected to a scan driver (not shown) andtransmits a first scan signal GW to the second transistor T2 and theseventh transistor T7. The second scan line 152 may be applied with avoltage of opposite polarity to a voltage applied to the first scan line151 at the same timing as the signal of the first scan line 151. Forexample, when a negative voltage is applied to the first scan line 151,a positive voltage may be applied to the second scan line 152. Thesecond scan line 152 transmits the second scan signal GC to the thirdtransistor T3. The initialization control line 153 transmits aninitialization control signal GI to the fourth transistor T4. The lightemission control line 155 transmits the light emission control signal EMto the fifth transistor T5 and the sixth transistor T6.

The data line 171 is a wire that transmits a data voltage DATA generatedby a data driver (not shown), and accordingly, intensity of a lightemitting current transmitted to the light emitting diode ED changes andthus the luminance of the light emitting diode ED also changes. Thedriving voltage line 172 applies the driving voltage ELVDD. The firstinitialization voltage line 127 transmits a first initialization voltageVinit, and the second initialization voltage line 128 transmits a secondinitialization voltage AVinit. The common voltage line 741 applies thecommon voltage ELVSS to a cathode of the light emitting diode LED. Inthe present embodiment, voltages applied to the driving voltage line172, the first and second initialization voltage line 127 and 128, andthe common voltage line 741 may be constant voltages, respectively.

The driving transistor T1 (also called a first transistor) is a p-typetransistor, and has a silicon semiconductor as a semiconductor layer.The driving transistor T1 is a transistor that adjusts intensity of alight emission current output to an anode of the light emitting diodeLED according to the magnitude of a voltage (i.e., a voltage stored inthe storage capacitor Cst) of a gate electrode of the driving transistorT1. Since brightness of the light emitting diode LED is adjustedaccording to the intensity of a light emission current output to theanode of the light emitting diode LED, luminance of the light emittingdiode LED can be adjusted according to a data voltage DATA applied tothe pixel. For this purpose, a first electrode of the driving transistorT1 is disposed to be applied with the fifth transistor T5. In addition,the first electrode of the driving transistor T1 is also connected witha second electrode of the second transistor T2 and is thus applied withthe data voltage DATA. A second electrode of the driving transistor T1outputs a light emitting current to the light emitting diode LED andthus is connected with the anode of the light emitting diode LED via thesixth transistor T6 (hereinafter, also referred to as an output controltransistor). In addition, the second electrode of the driving transistorT1 is also connected with the third transistor T3, and thus transmitsthe data voltage DATA applied to the first electrode to the thirdtransistor T3. The gate electrode of the driving transistor T1 isconnected with one electrode (hereinafter, referred to as a secondstorage electrode) of the storage capacitor Cst. Thus, a voltage of thegate electrode of the driving transistor T1 is changed according to thevoltage stored in the storage capacitor Cst, and accordingly, the lightemitting current output from the driving transistor T1 is changed. Thestorage capacitor Cst serves to maintain the voltage of the gateelectrode of the driving transistor T1 to be constant for one frame. Thegate electrode of the driving transistor T1 is also connected with thethird transistor T3 and thus the data voltage DATA applied to the firstelectrode of the driving transistor T1 may be transmitted to the gateelectrode of the driving transistor T1 through the third transistor T3.The gate electrode of the driving transistor T1 is also connected to thefourth transistor T4 and may be initialized by receiving the firstinitialization voltage Vinit.

The second transistor T2 is a p-type transistor and has a siliconsemiconductor as a semiconductor layer. The second transistor T2 is atransistor that receives the data voltage DATA into the pixel. A gateelectrode of the second transistor T2 is connected with the first scanline 151 and one electrode (hereinafter, referred to as a lower boostelectrode) of the boost capacitor C_(boost). A first electrode of thesecond transistor T2 is connected with the data line 171. A secondelectrode of the second transistor T2 is connected with the firstelectrode of the driving transistor T1. When the second transistor T2 isturned on by a negative voltage of the first scan signal GW transmittedthrough the first scan line 151, and the data voltage DATA transmittedthrough the data line 171 is transmitted to the first electrode of thedriving transistor T1, and is then transmitted to the gate electrode ofthe driving transistor T1 and finally stored in the storage capacitorCst.

The third transistor T3 is an n-type transistor and has an oxidesemiconductor as a semiconductor layer. The third transistor T3 iselectrically connected to the second electrode of the driving transistorT1 and the gate electrode of the driving transistor T1. As a result, thedata voltage DATA is compensated by a threshold voltage of the drivingtransistor T1 and then stored in the second storage electrode of thestorage capacitor Cst by the third transistor T3. A gate electrode ofthe third transistor T3 is connected to the second scan line 152, and afirst electrode of the third transistor T3 is connected to the secondelectrode of the driving transistor T1. A second electrode of the thirdtransistor T3 is connected with a second storage electrode of thestorage capacitor Cst, the gate electrode of the driving transistor T1,and the other electrode (hereinafter, referred to as an upper boostelectrode) of the boost capacitor C_(boost). The third transistor T3 isturned on by a voltage of the positive voltage of the second scan signalGC transmitted through the second scan line 152, and thus connects thegate electrode of the driving transistor T1 and the second electrode ofthe driving transistor T1, and transmits the voltage applied to the gateelectrode of the driving transistor T1 to store the voltage in thestorage capacitor Cst. In this case, the voltage stored in the storagecapacitor Cst is a voltage of the gate electrode of the drivingtransistor T1 when the driving transistor T1 is turned off, and thus isstored in a state that a threshold voltage Vth of the driving transistorT1 is compensated.

The fourth transistor T4 is an n-type transistor and has an oxidesemiconductor as a semiconductor layer. The fourth transistor T4initializes the gate electrode of the driving transistor T1 and thesecond storage electrode of the storage capacitor Cst. The gateelectrode of the fourth transistor T4 is connected to the initializationcontrol line 153, and the first electrode of the fourth transistor T4 isconnected to the first initialization voltage line 127. The secondelectrode of the fourth transistor T4 is connected to the secondelectrode of the third transistor T3, the second storage electrode ofthe storage capacitor Cst, the gate electrode of the driving transistorT1, and the upper boost electrode of the boost capacitor C_(boost). Thefourth transistor T4 is turned on by the positive voltage of theinitialization control signal GI received through the initializationcontrol line 153, and in this case, the first initialization voltageVinit is applied to the gate electrode of the driving transistor T1, thesecond storage electrode of the storage capacitor Cst, and the upperboost electrode of the boost capacitor C_(boost) for initialization.

The fifth transistor T5 and the sixth transistor T6 are p-typetransistors and have silicon semiconductors as semiconductor layers.

The fifth transistor T5 serves to transmit the driving voltage ELVDD tothe driving transistor T1. The gate electrode of the fifth transistor T5is connected to the light emission control line 155, the first electrodeof the fifth transistor T5 is connected to the driving voltage line 172,and the second electrode of the fifth transistor T5 is connected to thefirst electrode of the driving transistor T1.

The sixth transistor T6 serves to transmit the light emitting currentoutput from the driving transistor T1 to the light emitting diode LED. Agate electrode of the sixth transistor T6 is connected to the lightemission control line 155, a first electrode of the sixth transistor T6is connected to the second electrode of the driving transistor T1, and asecond electrode of the sixth transistor T6 is connected to the anode ofthe light emitting diode LED.

The seventh transistor T7 is a p-type or n-type transistor, and has asilicon semiconductor or oxide semiconductor as a semiconductor layer.The seventh transistor T7 initializes the anode of the light emittingdiode LED. A gate electrode of seventh transistor T7 is connected to thefirst scan line 151, a first electrode of seventh transistor T7 isconnected to the anode of light emitting diode LED, and a secondelectrode of seventh transistor T7 is connected to second initializationvoltage line 128. When the seventh transistor T7 is turned on by thenegative voltage of the first scan line 151, the second initializationvoltage AVinit is applied to the anode of the light emitting diode LEDand initialized. The gate electrode of the seventh transistor T7 isconnected to a separate bypass control line and can be controlled byseparate wiring from the first scan line 151. In addition, depending onembodiments, the second initialization voltage line 128 to which thesecond initialization voltage AVinit is applied may be the same as thefirst initialization voltage line 127 to which the first initializationvoltage Vinit is applied.

It has been described that one pixel PX includes seven transistors T1 toT7, two capacitors (storage capacitor Cst and boost capacitorC_(boost)), but this is not restrictive, and depending on embodiments,the boost capacitor C_(boost) may be excluded. In addition, the thirdtransistor and the fourth transistor are provided as the n-typetransistors in the above-described embodiment, but only one of the thirdand fourth transistors may be provided as the n-type transistor or theother may be provided as the n-type transistor. In addition, accordingto another embodiment, the seven transistors may all be changed top-type transistors or no-type transistors.

Hereinafter, referring to FIG. 7 and FIG. 8 , a stacked structure of thedisplay area DA will be described. FIG. 7 is a cross-sectional view ofconfigurations arranged in the display area DA, and FIG. 8 is a top planview of some configurations of the display area DA according to theembodiment.

Referring to FIG. 7 , the display panel according to the embodimentincludes a substrate SUB. The substrate SUB may include an inorganicinsulating material such as glass or an organic insulating material suchas plastic such as polyimide (“PI”). The substrate SUB may besingle-layered or multi-layered. The substrate SUB may have a structurein which at least one base layer containing a sequentially stackedpolymer resin and at least one inorganic layer are alternately stacked.

The substrate SUB may have various degrees of flexibility. The substrateSUB may be a rigid substrate or a flexible substrate capable of bending,folding, rolling, and the like.

A buffer layer BF may be positioned on the substrate SUB. The bufferlayer BF blocks transmission of impurities from the substrate SUB to anupper layer of the buffer layer BF, particularly a semiconductor layerACT, thereby preventing characteristic degradation of the semiconductorlayer ACT and reducing stress. The buffer layer BF may include aninorganic insulating material or an organic insulating material such asa silicon nitride or a silicon oxide. A part or all of the buffer layerBF may be omitted.

The semiconductor layer ACT is positioned on the buffer layer BF. Thesemiconductor layer ACT may include at least one of polysilicon and anoxide semiconductor. The semiconductor layer ACT includes a channelregion C, a first region P, and a second region Q. The first region Pand the second region Q are respectively disposed on both sides of thechannel region C. The channel region C may include a semiconductor dopedwith a small amount of an impurity or undoped with an impurity, and thefirst region P and the second region Q may include a semiconductor dopedwith a large amount of an impurity compared to the channel region C. Thesemiconductor layer ACT may be formed of or include an oxidesemiconductor, and in this case, a separate protective layer (not shown)may be added to protect the oxide semiconductor material, which isvulnerable to external environments such as a high temperature.

A gate insulating layer GI is positioned on the semiconductor layer ACT.The gate insulating layer GI may be a single-layer or a multi-layerincluding at least one of a silicon oxide (S_(i)O_(x)), a siliconnitride (S_(i)N_(x)), and a silicon oxynitride (S_(i)O_(x)N_(y)).

A gate electrode GE is positioned on the gate insulating layer GI. Thegate electrode GE may be a single layer or a multilayer in which a metalfilm including any one of copper (Cu), a copper alloy, aluminum (Al), analuminum alloy, molybdenum (Mo), a molybdenum alloy, titanium (Ti), anda titanium alloy is laminated. The gate electrode GE may overlap thechannel region C of the semiconductor layer ACT in the plan view.

A first insulating layer IL1 is positioned on the gate electrode GE andthe gate insulating layer GI. The first insulating layer IL1 may be asingle-layer or a multi-layer including at least one of a silicon oxide(SOX), a silicon nitride (S_(i)N_(x)), and a silicon oxynitride(S_(i)O_(x)N_(y)).

A source electrode SE and a drain electrode DE are positioned on thefirst insulating layer Ill. The source electrode SE and the drainelectrode DE are respectively connected to the first region P and thesecond region Q of the semiconductor layer ACT through a contact holeformed in the first insulating layer ILL

The source electrode SE and the drain electrode DE may include aluminum(Al), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), chromium(Cr), nickel (Ni), calcium (Ca), molybdenum (Mo), titanium (Ti),tungsten (W), and/or copper (Cu), and may have a single-layer ormulti-layered structure including the same.

A second insulating layer IL2 is positioned on the first insulatinglayer ILL the source electrode SE, and the drain electrode DE. Thesecond insulating layer IL2 may include an organic insulating materialsuch as general-purpose polymers such as polymethyl methacrylate(“PMMA”) or polystyrene (“PS”), polymer derivatives with phenolicgroups, acryl-based polymers, imide-based polymers, polyimide,acryl-based polymers, siloxane-based polymers, and the like. In thepresent specification, the second insulating layer IL2 is illustrated asa single layer, but this is not restrictive, and it may bemulti-layered.

The first electrode E1 is positioned on the second insulating layer IL2.The first electrode E1 is electrically connected to the drain electrodeDE through a contact hole of the second insulating layer IL2.

The first electrode E1 may include a metal such as silver (Ag), lithium(Li), calcium (Ca), aluminum (Al), magnesium (Mg), or gold (Au), and mayalso include a transparent conductive oxide (“TCO”) such as an indiumtin oxide (“ITO”), an indium zinc oxide (“IZO”), and the like. The firstelectrode E1 may be formed of a single layer including a metal materialor a transparent conductive oxide, or a multilayer including the same.For example, the first electrode E1 may have a triple layer structure ofindium tin oxide (ITO)/silver (Ag)/indium tin oxide (ITO).

A transistor formed of a gate electrode GE, a semiconductor layer ACT, asource electrode SE, and a drain electrode DE is connected to the firstelectrode E1 to supply a current to the light emitting diode.

The pixel defining layer PDL is positioned on the second insulatinglayer IL2 and the first electrode E1.

The pixel defining layer PDL defines a 1-1 opening OP1-1 that overlapsat least a part of the first electrode E1 in the plan view and definesthe light emitting region. The 1-1 opening OP1-1 may have a planar shapealmost similar to a planar shape of the first electrode E1. As shown inFIG. 8 , the 1-1 opening OP1-1 is illustrated in a circular shape on aplane, but it is not limited thereto, and may have any shape such as anoctagonal shape similar to a rhombus or an octagonal shape similar to arhombus, a quadrangle, a polygon, or an oval in another embodiment.

The pixel defining layer PDL may contain an organic insulator.Alternatively, the pixel defining layer PDL may include an inorganicinsulating material such as a silicon nitride, a silicon oxynitride, ora silicon oxide. Alternatively, the pixel defining layer PDL may includean organic insulator and an inorganic insulator. In the embodiment, thepixel defining layer PDL contains a light blocking material and may beprovided in black. The light blocking material is carbon black, carbonnanotubes, a resin containing a black dye, or a paste, metal particles,for example, nickel, aluminum, molybdenum, and alloys thereof, metaloxide particles (e.g., a chromium oxide), or metal nitride particles(e.g., chromium nitride), and the like. When the pixel defining layerPDL includes a light blocking material, it is possible to reduce thereflection of external light by the metal structures disposed under thepixel defining layer PDL. However, the present invention is not limitedthereto. In another embodiment, the pixel defining layer PDL does notcontain a light-blocking material, but may contain a light-transmittingorganic insulator.

A spacer SPC may be disposed on the pixel defining layer PDL. The spacerSPC may contain an organic insulator such as polyimide. Alternatively,the spacer SPC may include an inorganic insulator such as a siliconnitride (SiNx) or a silicon oxide (SiO₂), or may include an organicinsulator and an inorganic insulator.

In the embodiment, the spacer SPC may contain the same material as thepixel defining layer PDL. In this case, the pixel defining layer PDL andthe spacer SPC may be formed together in a mask process using a halftonemask or the like. In the embodiment, the pixel defining layer PDL andspacer SPC may contain different materials.

An emission layer EML is positioned on the first electrode E1. Theemission layer EML may contain organic and/or inorganic materials. Theemission layer EML may generate light of a predetermined color. Theemission layer EML may be positioned only within the 1-1 opening OP1-1of the pixel defining layer using a mask or inkjet process.

A first functional layer FL1 may be positioned between the emissionlayer EML and the first electrode E1, and a second functional layer FL2may be positioned between the emission layer EML and the secondelectrode E2.

The first functional layer FL1 may include at least one of a holeinjection layer (“HIL”) and a hole transporting layer (HTL), and thesecond functional layer FL2 may include at least one of an electrontransporting layer (“ETL”) and an electron injection layer (“EIL”).

While the emission layer EML is disposed for each pixel to correspond tothe opening OP1-1 of the pixel defining layer PDL, the first functionallayer FL1 and the second functional layer FL2 can be integrally formedto wholly cover the substrate SUB. In other words, the first functionallayer FL1 and the second functional layer FL2 may be integrally formedto completely cover the display area DA of the substrate SUB,respectively.

The second electrode E2 is positioned on the emission layer EML. Thesecond electrode E2 may include a reflective metal including calcium(Ca), barium (Ba), magnesium (Mg), aluminum (Al), silver (Ag), gold(Au), nickel (Ni), chromium (Cr), lithium (Li), molybdenum (Mo), or thelike, or a transparent conductive oxide (TCO) such as an indium tinoxide (ITO) or an indium zinc oxide (IZO).

The first electrode E1, the emission layer EML, and the second electrodeE2 may form a light emitting diode ED. Here, the first electrode E1 maybe an anode that is a hole injection electrode, and the second electrodeE2 may be a cathode that is an electron injection electrode. However,the embodiment is not limited thereto, and depending on the drivingmethod of the light emitting display device, the first electrode E1 maybe a cathode and the second electrode E2 may be an anode.

Holes and electrons are injected into the emission layer EML from thefirst electrode E1 and the second electrode E2, and light emissionoccurs when an exciton, where the injected hole and electron arecombined, falls from an excited state to a ground state.

A capping layer AL1 may be positioned on the second electrode E2. Thecapping layer AL1 may serve to improve the luminous efficiency of thelight emitting diode ED by the principle of constructive interference.The capping layer AL1 may include, for example, a material having arefractive index of 1.6 or more for light having a wavelength of 589nanometers (nm).

The capping layer AL1 may be an organic capping layer including anorganic material, an inorganic capping layer including an inorganicmaterial, or a composite capping layer including an organic material andan inorganic material. For example, the capping layer AL1 may include acarbocyclic compound, a heterocyclic compound, an amine group-containingcompound, a porphine derivative, a phthalocyanine derivative, anaphthalocyanine derivative, an alkali metal complex, alkaline earthmetal complexes, or any combination thereof. The carbocyclic compounds,the heterocyclic compounds, and the amine group-containing compounds maybe optionally substituted with substituents including O, N, S, Se, Si,F, Cl, Br, I, or any combination thereof.

A low reflective layer AL2 may be disposed on the capping layer AL1.Since the capping layer AL1 may be disposed on the light emitting diodeED, a low reflective layer AL2 may be disposed on the light emittingdiode ED. The low reflective layer AL2 may overlap a front surface ofthe substrate SUB in the plan view.

The low reflective layer AL2 may include an inorganic material havinglow reflectance, and in an embodiment, it may include a metal or metaloxide. When the low reflective layer AL2 contains a metal, it mayinclude, for example, ytterbium (Yb), bismuth (Bi), cobalt (Co),molybdenum (Mo), titanium (Ti), zirconium (Zr), aluminum (Al), chromium(Cr), niobium (Nb), platinum (Pt), tungsten (W), indium (In), tin (Sn),iron (Fe), nickel (Ni), tantalum (Ta), manganese (Mn), and it mayinclude zinc (Zn), germanium (Ge), silver (Ag), magnesium (Mg), gold(Au), copper (Cu), calcium (Ca), or a combination thereof. In addition,when the low reflective layer AL2 contains a metal oxide, it mayinclude, for example, SiO2, TiO2, ZrO2, Ta2O5, HfO2, Al2O3, ZnO, Y2O3,BeO, MgO, PbO2, WO3, SiNx, LiF, CaF2, MgF2, CdS, or a combinationthereof.

In the embodiment, an absorption coefficient (k) of the inorganicmaterial included in the low reflective layer AL2 may be 4.0 or less and0.5 or more (0.5≤k≤4.0). In addition, the inorganic material included inthe low reflective layer AL2 may have a refractive index (n) of 1 ormore (n≥1.0).

The low reflective layer AL2 induces destructive interference betweenthe light incident into the display device and the light reflected fromthe metal disposed under the low reflective layer AL2, thereby reducingreflection of external light. Accordingly, the display quality andvisibility of the display device can be improved by reducing thereflection of the external light of the display device through the lowreflective layer AL2. The encapsulation layer ENC is positioned on thelow reflective layer AL2. The encapsulation layer ENC may cover and sealnot only the top surface of the light emitting diode, but also the sidesurfaces. Since the light emitting diode is very vulnerable to moistureand oxygen, the encapsulation layer ENC seals the light emitting diodeto block the inflow of external moisture and oxygen.

The encapsulation layer ENC may include a plurality of layers, whichincludes a composite film including both an inorganic layer and anorganic layer. For example, the encapsulation layer ENC may be asequentially formed triple layer of a first encapsulation layer EIL1, anencapsulation organic layer EOL, and a second encapsulation layer EIL2.

The first encapsulation inorganic layer EIL1 may cover the secondelectrode E2. The first encapsulation inorganic layer EIL1 can preventexternal moisture or oxygen from penetrating into the light emittingdiode. For example, the first encapsulation inorganic layer EIL1 mayinclude a silicon nitride, a silicon oxide, a silicon oxynitride, or acombination thereof. The first encapsulation inorganic layer EIL1 may beformed through a deposition process.

The encapsulation organic layer EOL may be disposed on the firstencapsulation inorganic layer EIL1 and contact the first encapsulationinorganic layer EIL1. Curves formed on the upper surface of the firstencapsulation inorganic layer EIL1 or particles existing on the firstencapsulation inorganic layer EIL1 are covered by the encapsulationorganic layer EOL, and thus it is possible to prevent a surface state ofan upper surface of the first encapsulation inorganic layer EIL1 frominfluencing the components disposed on the encapsulation organic layerEOL. In addition, the encapsulation organic layer EOL may relieve thestress between the contacting layers. The encapsulation organic layerEOL may contain organic materials and may be formed through solutionprocesses such as spin coating, slit coating, and inkjet processes.

The second encapsulation inorganic layer EIL2 is disposed on theencapsulation organic layer EOL to cover the encapsulation organic layerEOL. The second encapsulation inorganic layer EIL2 may be stably formedon a relatively flat surface than dispose on the first encapsulationinorganic layer DLL The second encapsulation inorganic layer EIL2prevents inflow to the outside by encapsulating moisture emitted fromthe encapsulation organic layer EOL. The second encapsulation inorganiclayer EIL2 may include a silicon nitride, a silicon oxide, a siliconoxynitride, or a combination thereof. The second encapsulation inorganiclayer EIL2 may be formed through a deposition process.

The first conductive layer TL1, the first touch insulating layer TIL1,the second conductive layer TL2, and the second touch insulating layerTIL2 may be positioned on the encapsulation layer ENC. The firstconductive layer TL1, the first touch insulating layer TIL1, the secondconductive layer TL2, and the second touch insulating layer TIL2 mayform the touch sensor TS shown in FIG. 3 .

The first conductive layer TL1 may be directly disposed on theencapsulation layer ENC. In this case, the first conductive layer TL1may be directly disposed on the second encapsulation inorganic layerEIL2 of the encapsulation layer ENC. However, the present invention isnot limited thereto.

The display device according to the embodiment may include an insulatinglayer (not shown) interposed between the first conductive layer TL1 andthe encapsulation layer ENC. The insulating layer may be disposed on thesecond encapsulation inorganic layer EIL2 of the encapsulation layer ENCto planarize a surface on which the first conductive layer TL1 and thelike are disposed. In this case, the first conductive layer TL1 may bedirectly disposed on the insulating layer. The insulating layer mayinclude an inorganic insulator such as a silicon oxide (SiO₂), a siliconnitride (SiNx), or a silicon oxynitride (SiO_(x)N_(y)). Alternatively,the insulating layer may include an organic insulator.

In the embodiment, the first touch insulating layer TIL1 may be disposedon the first conductive layer TL1. The first touch insulating layer TIL1may be formed of or include an inorganic or organic material. When thefirst touch insulating layer TIL1 is formed of an inorganic material,the first touch insulating layer TIL1 may include at least one selectedfrom a group consisting of a silicon nitride, an aluminum nitride, azirconium nitride, a titanium nitride, a hafnium nitride, a tantalumnitride, a silicon oxide, an aluminum oxide, a titanium oxide, a tinoxide, a cerium oxide, and a silicon oxynitride. When the first touchinsulating layer TIL1 is formed of an organic material, the first touchinsulating layer TIL1 may include at least one selected from a groupconsisting of an acryl-based resin, a methacrylic resin, polyisoprene, avinyl-based resin, an epoxy-based resin, a urethane-based resin, acellulose-based resin, and a perylene-based resin.

In the embodiment, the second conductive layer TL2 may be disposed onthe first touch insulating layer TIL1. The second conductive layer TL2may serve as a sensor that detects the user's touch input. The firstconductive layer TL1 may serve as a connector connecting a patternedsecond conductive layer TL2 in one direction. In the embodiment, boththe first conductive layer TL1 and the second conductive layer TL2 mayserve as a sensor. In this case, the first conductive layer TL1 and thesecond conductive layer TL2 may be electrically connected to each otherthrough a contact hole. As both the first conductive layer TL1 and thesecond conductive layer TL2 serve as sensors, resistance of a touchelectrode is reduced, and thus the user's touch input can be quicklysensed.

In the embodiment, the first conductive layer TL1 and the secondconductive layer TL2 may have, for example, a mesh structure, and thuslight emitted from the light emitting diode ED can pass therethrough. Inthis case, the first conductive layer TL1 and the second conductivelayer TL2 may be disposed so as to not overlap the emission layer EML inthe plan view.

The first conductive layer TL1 and the second conductive layer TL2 mayinclude a metal layer or a transparent conductive layer. The metal layermay include molybdenum (Mo), silver (Ag), titanium (Ti), copper (Cu),aluminum (Al), and an alloy thereof. The transparent conductive layermay include a transparent conductive oxide such as indium tin oxide(ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and indium tin zincoxide (“ITZO”). In addition, the transparent conductive layer mayinclude a conductive polymer such as PEDOT, metal nanowires, carbonnanotubes, or graphene.

In the embodiment, the second touch insulating layer TIL2 may bedisposed on the second conductive layer TL2. The second touch insulatinglayer TIL2 may include an inorganic material or an organic material.When the second touch insulating layer TIL2 includes an inorganicmaterial, the second touch insulating layer TIL2 may include at leastone selected from a group consisting of a silicon nitride, an aluminumnitride, a zirconium nitride, a titanium nitride, a hafnium nitride, atantalum nitride, a silicon oxide, an aluminum oxide, a titanium oxide,a tin oxide, a cerium oxide, and a silicon oxynitride. When the secondtouch insulating layer TIL2 includes an organic material, the secondtouch insulating layer TIL2 may include at least one selected from agroup consisting of an acryl-based resin, a methacrylic resin,polyisoprene, a vinyl-based resin, an epoxy-based resin, aurethane-based resin, a cellulose-based resin, and a perylene-basedresin.

A light blocking layer BM may be positioned on the second touchinsulating layer TIL2. The light blocking layer BM may define a 2-1opening OP2-1 overlapping the emission layer EML in the plan view. Thelight blocking layer BM may overlap at least a part of the pixeldefining layer PDL in the plan view.

The 2-1 opening OP2-1 may overlap the 1-1 opening OP1-1 of the pixeldefining layer PDL in the plan view. A size of the 2-1 opening OP2-1 maybe larger than a size of the 1-1 opening OP1-1 on a plane, and the 2-1opening OP2-1 may have a shape surrounding the 1-1 opening OP1-1. The2-1 opening OP2-1 may have a planar shape that is substantially similarto a shape of the 1-1 opening OP1-1. In the embodiment shown in thedrawing, the 2-1 opening OP2-1 has a circular shape on a plane, but thisis not restrictive, and may have any shape such as a rhombus or anoctagonal shape similar to a rhombus or an octagonal shape similar to arhombus on a plane, a quadrangle, a polygon, or an oval.

A reflection adjusting layer OL1 may be disposed on the light blockinglayer BM. The reflection adjusting layer OL1 may selectively absorblight of a wavelength of a partial band among light reflected inside thedisplay device or light incident outside the display device. Thereflection adjusting layer OL1 may fill the 2-1 opening OP2-1.

For example, the reflection adjusting layer OL1 absorbs a firstwavelength region of 490 nm to 505 nm and a second wavelength region of585 nm to 600 nm, and thus light transmittance in the first wavelengthregion and second wavelength region may be 40% or less. The reflectionadjusting layer OL1 may absorb light of a wavelength outside theemission wavelength range of red, green, or blue emitted from the lightemitting diode ED. As described, the reflection adjusting layer OL1absorbs light of a wavelength that does not belong to a wavelength rangeof red, green, or blue emitted from the light emitting diode, therebypreventing or minimizing the reduction in luminance of the displaydevice and simultaneously preventing or minimizing the deterioration ofthe luminous efficiency and improving visibility of the display device.

In the embodiment, the reflection adjusting layer OL1 may be provided asan organic material layer including a dye, a pigment, or combinationthereof. The reflection adjusting layer OL1 may contain atetraazaporphyrin (“TAP”)-based compound, a porphyrin-based compound, ametal porphyrin-based compound, an oxazine-based compound, and asquarylium-based compound, a triarylmethane compound, a polymethinecompound, an anthraquinone compound, a phthalocyanine compound, an azocompound, a perylene compound, a xanthene-based compound, adiammonium-based compound, a dipyrromethene-based compound, acyanine-based compound, and a combination thereof.

For example, the reflection adjusting layer OL1 may contain a compoundrepresented by any one of Chemical Formula 1 to Chemical Formula 4.Chemical Formula 1 to Chemical Formula 4 may have a chromophorestructure corresponding to some of the compounds described above.Chemical Formula 1 to Chemical Formula 4 are only examples, but thepresent invention is not limited thereto.

Here, in Chemical Formula 1 to Chemical Formula 4,

M is a metal,

X— is a monovalent negative ion,

each R is the same as or different from each other, and each may behydrogen, heavy hydrogen (-D), —F, —Cl, —Br, —I, a hydroxyl group, acyano group, or a nitro group; heavy hydrogen, —F, —Cl, —Br, —I, ahydroxyl group, a cyano group, a nitro group, a C₃-C₆₀ carbocyclicgroup, a C₁-C₆₀ heterocyclic group, a C₆-C₆₀ aryloxy group, a C₆-C₆₀arylthio group, —Si Q₁₁, Q₁₂, and Q₁₃, —N Q₁₁, and Q₁₂, —B Q₁₁, and Q₁₂,—C(═O) Q₁₁, —S(═O)₂ Q₁₁, —P(═O) Q₁₁, and Q₁₂, or an unsubstituted orsubstituted with any combination thereof, a C₁-C₆₀ alkyl group, a C₂-C₆₀alkenyl group, a C₂-C₆₀ alkynyl group, or a C₁-C₆₀ alkoxy group,

heavy hydrogen, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, anitro group, a C₁-C₆₀ alkyl group, a C₂-C₆₀ alkenyl group, a C₂-C₆₀alkynyl group, a C₁-C₆₀ alkoxy group, a C₃-C₆₀ carbocyclic group, aC₁-C₆₀ heterocyclic group, a C₆-C₆₀ aryloxy group, a C₆-C₆₀ arylthiogroup, —Si Q₂₁, Q₂₂, and Q₂₃, —N Q₂₁, and Q₂₂, —B Q₂₁, and Q₂₂, —C(═O)Q₂₁, —S(═O)₂ Q₂₁, —P(═O) Q₂₁, and Q₂₂, or unsubstituted or substitutedwith any combination thereof, a C₃-C₆₀ carbocyclic group, a C₁-C₆₀heterocyclic group, a C₆-C₆₀ aryloxy group, or a C₆-C₆₀ arylthio group,or —Si Q₃₁, Q₃₂, and Q₃₃, —N Q₃₁, and Q₃₂, —B Q₃₁, and Q₃₂, —C(═O) Q₃₁,—S(═O)₂ Q₃₁, or —P(═O) Q₃₁, and Q₃₂.

The Q₁ to Q₃, Q₁₁ to Q₁₃, Q₂₁ to Q₂₃, and Q₃₁ to Q₃₃ may beindependently hydrogen; heavy hydrogen; —F; —Cl; —Br; —I; a hydroxylgroup; a cyano group; a nitro group; a C₁-C₆₀ alkyl group; a C₂-C₆₀alkenyl group; a C₂-C₆₀ alkynyl group; a C₁-C₆₀ alkoxy group; heavyhydrogen; —F; a cyano group; a C₁-C₆₀ alkyl group; a C₁-C₆₀ alkoxygroup; a phenyl group; a biphenyl group; or unsubstituted or substitutedwith any combination thereof, a C₃-C₆₀ carbocyclic group; or a C₁-C₆₀heterocyclic group.

In the embodiment, the X— may be a halide ion, a carbolate ion, anitrate ion, a sulfonate ion, or a bisulfate ion.

For example, the X may be F⁻, Cl⁻, Br⁻, I⁻, CH₃COO⁻, NO₃ ⁻, HSO₄ ⁻, apropionate ion, a benzene sulfonate ion, and the like.

In the embodiment, a reflectance measured in the specular componentincluded (“SCI”) mode on the surface of the reflection adjusting layerOL1 may be 10% or less. That is, the reflection adjusting layer OL1absorbs external light reflection of the display device, therebyimproving visibility.

The display device according to the present embodiment may include thelow reflective layer AL2 and the reflection adjusting layer OL1 withoutusing a polarization film to reduce external light reflection.

In the embodiment, the reflection adjusting layer OL1 may havetransmittance of about 64% to 72%. The transmittance of the reflectionadjusting layer OL1 may be adjusted according to the content of thepigment and/or dye included in the reflection adjusting layer OL1.

A first organic layer OL2 may be positioned on the reflection adjustinglayer OL1. The first organic layer OL2 may overlap at least a portion ofthe light blocking layer BM and may overlap at least a portion of thepixel defining layer PDL in the plan view.

The first organic layer OL2 may include a light transmissive organicmaterial with a low refractive index. For example, the first organiclayer OL2 may include at least one of acryl (acrylic) resin, polyimide(polyimide) resin, polyamide resin, and Alq3 [Tris(8-hydroxyquinolinato)aluminum]. The first organic layer OL2 may have arelatively smaller refractive index than a second organic layer OL3,which will be described later.

The first organic layer OL2 may define a 4-1 opening OP4-1 overlappingthe 1-1 opening OP1-1 and the 2-1 opening OP2-1 in the plan view.

The 4-1 opening OP4-1 may overlap the 1-1 opening OP1-1 of the pixeldefining layer PDL and the 2-1 opening OP2-1 of the light blocking layerBM in the plan view. A size of the 4-1 opening OP4-1 may be larger thana size of the 1-1 opening OP1-1 and the 2-1 opening OP2-1 on a plane,and the 4-1 opening OP4-1 may have a shape surrounding the 1-1 openingOP1-1 and the 2-1 opening OP2-1. The 4-1 opening OP4-1 may have a planarshape substantially similar to a shape of the 1-1 opening OP1-1 and the2-1 opening OP2-1. In the embodiment, the 4-1 opening OP4-1 has acircular shape on a plane, but is not limited thereto, and may have anyshape such as a rhombus or an octagonal shape similar to a rhombus or arhombus on a plane, a quadrangle, a polygon, or an oval in anotherembodiment.

The second organic layer OL3 may be positioned on top of the firstorganic layer OL2. The second organic layer OL3 may have a shape thatoverlaps the front surface of the substrate SUB in the plan view. Thesecond organic layer OL3 may include a light transmissive organicmaterial with a high refractive index. The second organic layer OL3 mayhave a relatively greater refractive index than the first organic layerOL2. The second organic layer OL2 may be formed of or include an organicinsulating material.

The refractive index of the second organic layer OL2 may be adjustedaccording to a functional group included in the second organic layerOL2. Alternatively, the refractive index of the second organic layer OL2may be adjusted according to the type and content of nanoparticlesincluded in the second organic layer OL2.

The second organic layer OL2 may include any material having a higherrefractive index than the first organic layer OL1, for example, a layerformed of a material in which hollow silica is dispersed in anacryl-based resin, a siloxane resin, or the like, and in this case, therefractive index of the second organic layer OL2 may be about 1.30 toabout 1.53. Alternatively, the second organic layer OL2 may include alayer formed of an acryl-based resin including fluorine (F), and in thiscase, a refractive index may be about 1.38 to about 1.53. Alternatively,the second organic layer OL2 may include a layer formed of a materialincluding a functional group such as an aromatic ring in a binder of aresin such as acryl-based resin, a siloxane resin, polyimide, and thelike, and in this case, the refractive index of the second organic layerOL2 may be about 1.50 to about 1.65. Alternatively, the second organiclayer OL2 may include a layer formed of an acryl-based resin containinghalogen elements such as iodine (I) and bromine (Br) or elements such assulfur (S), phosphorus (P), and silicon (Si). In this case, therefractive index of the second organic layer OL2 may be about 1.60 toabout 1.70. Alternatively, the second organic layer OL2 may include alayer formed of an acryl-based resin including nanoparticles such astitanium oxide (TiO₂), zirconium oxide (ZrO₂), graphene, and the like,and in this case, the refractive index may be about 1.50 to about 1.90.Alternatively, the second organic layer OL2 may include a layer formedof an organometallic polymer including an acryl-based resin, a siloxaneresin, and the like, and in this case, the refractive index of thesecond organic layer OL2 may be about 1.60 to about 1.90. The refractiveindex mentioned above may be a value measured using light (sodiumD-line) of about 589 nm.

The second organic layer OL3 may be positioned within the 4-1 openingOP4-1 of the first organic layer OL2. In this case, the second organiclayer OL3 may be in contact with the side of the first organic layerOL2. In addition, the second organic layer OL3 may be positioned tocover the top surface of the first organic layer OL2.

At least a part of light generated by the light emitting diode ED istotally reflected at the interface of the first organic layer OL2 andthe second organic layer OL3, and thus the light can be focused in thefront. Specifically, light generated from the emission layer EML can beemitted in various directions, and at least a portion of the lightincident on the second organic layer OL3 is reflected at the interfacebetween the first organic layer OL2 and the second organic layer OL3. Inparticular, when an incident angle of the light incident on the secondorganic layer OL3 is larger than a threshold angle, the incident lightcan be totally reflected at the interface between the first organiclayer OL2 and the second organic layer OL3. That is, total reflectionmay occur at the interface between the first organic layer OL2 and thesecond organic layer OL3 while light incident on the second organiclayer OL3 having a relatively large refractive index proceeds to thefirst organic layer OL2 having a relatively small refractive index.

Hereinafter, referring to FIG. 9A and FIG. 9B, a stacked structure ofthe first element area EA1 disposed adjacent to the display area DA willbe described. FIG. 9A is a cross-sectional view of constituent elementsdisposed in the display area DA and the first element area EA1, and FIG.9B is a top plan view of some configurations of the display area DA andthe first element area EA1 according to the embodiment. Since adescription of the planar and cross-section structure for the displayarea DA is the same as the contents described with reference to FIG. 7and FIG. 8 , the same content as that described will be omitted below.The first element area EA1 will be described.

The first element area EA1 is formed of a transparent layer to allowlight to pass through, and no conductive layer or semiconductor layer ispositioned. The pixel defining layer, the light blocking layer BM, andthe like including the light blocking material may have a structure thatdoes not block light by defining an opening overlapping a positioncorresponding to the first element area EA1 in the plan view.

The first element area EA1 includes a buffer layer BF, a gate insulatinglayer GI, a first insulating layer ILL and a second insulating layer IL2that are disposed on the substrate SUB.

The pixel defining layer PDL according to the embodiment may define a1-2 opening OP1-2 overlapping the first element area EA1 in the planview. The pixel defining layer PDL containing the light blockingmaterial may be spaced apart without overlapping the first element areaEA1 in the plan view.

The first element area EA1 may include a first functional layer FL1, asecond functional layer FL2, a second electrode E2, a capping layer AL1,a low reflective layer AL2, and an encapsulation layer ENC that aredisposed on the second insulating layer IL2.

The first touch insulating layer TIL1 and second touch insulating layerTIL2 may be disposed on the encapsulation layer ENC. The firstconductive layer TL1 and the second conductive layer TL2 included in thetouch sensor may not overlap the first element area EA1 in the planview.

A 2-2 opening OP2-2 defined by the light blocking layer BM may bepositioned on the second touch insulating layer TIL2. The first elementarea EA1 may overlap the 2-2 opening OP2-2 of the light blocking layerBM in the plan view. The first element area EA1 may not overlap a lightblocking layer BM that blocks light in the plan view. The first elementarea EA1 may overlap a 3-1 opening OP3-1 of the reflection adjustinglayer OL1 in the plan view. The reflection adjusting layer OL1 maydefine the 3-1 opening OP3-1 overlapping the first element area EA1 inthe plan view. The 3-1 opening OP3-1 may have a shape that is similar toa shape of the first element area EA1. That is, the reflection adjustinglayer OL1 may have a shape with a part thereof removed from the firstelement area EA1.

Although the present specification shows an embodiment in which theopening is formed in such a way that the reflection adjusting layer OL1covers the side surface of the light blocking layer BM, it is notlimited thereto, and the side surfaces of the reflection adjusting layerOL1 and the light blocking layer BM are aligned to form a singlesurface, or the reflection adjusting layer OL1 may be formed on theupper surface of the light blocking layer BM in various forms.

The first organic layer OL2 may fill the 3-1 opening OP3-1 of thereflection adjusting layer OL1. The first organic layer OL2 may bepositioned within the 2-2 opening OP2-2 of the light blocking layer BM.The first organic layer OL2 may provide a flat top surface while fillinga plurality of openings. The second organic layer OL3 may be positionedon the first organic layer OL2.

According to the embodiment, since the light blocking layer BM and thereflection adjusting layer OL1 are removed in the first element areaEA1, transmittance may be excellent.

Hereinafter, a stacked structure of the second element area EA2 will bedescribed with reference to FIG. 10A and FIG. 10B. FIG. 10A is across-sectional view of constituent elements disposed in the secondelement area EA2, and FIG. 10B is a top plan view of some configurationsof the second element area EA2. A description of the above-describedconstituent element and the same constituent element will be omitted.

The second element area EA2 includes a display portion LDA where aplurality of pixels is disposed, and a light transmissive portion LTA. Adescription of the region in which the light emitting diode ED ispositioned among the planar and cross-sectional structures of thedisplay portion LDA is the same as that described in FIG. 7 and FIG. 8regarding the display area DA, and therefore, it will be omitted below.

Hereinafter, the light transmissive portion LTA will be described. Thesecond element area EA2 may have relatively high light transmittancecompared to the display area DA by including the light transmissiveportion LTA. The second element area EA2 is a region positioned on thefront surface of the second optical element ES2 described above, and hasa structure in which a display portion LDA including a plurality ofpixels is included and additionally a transmission portion LTA disposedbetween adjacent display portions LDA is formed. The display portion LDAmay have one unit structure by adding a plurality of pixels, and atransmission portion LTA may be positioned between adjacent unitstructures of the display portions LDA.

The light transmissive portion LTA is formed of only a transparent layerand thus light can pass through the light transmissive portion LTA. Noconductive layer or semiconductor layer is disposed in the lighttransmissive portion LTA, and the light transmissive portion LTA mayhave a structure not blocking light, since the pixel defining layer PDL,the light blocking layer BM, and the like defines openings overlappingthe light transmissive portion LTA in the plan view.

The light transmissive portion LTA may include a buffer layer BF and agate insulating layer GI that are disposed on the substrate SUB. In thepresent embodiment of the specification, the first insulating layer ILLthe second insulating layer IL2, the pixel defining layer PDL, and thespacer SPC are not positioned in the light transmissive portion LTA, butamong these layers, there may be a modification in the structure suchthat the transparent layer may also be positioned the light transmissiveportion LTA. Alternatively, it may be transformed into a structure inwhich all or part of the buffer layer BF and the gate insulating layerGI are removed.

The pixel defining layer PDL according to the embodiment may define a1-3 opening OP1-3 that overlaps the light transmissive portion LTA inthe plan view. The pixel defining layer PDL may have a shape with a partthereof removed from the light transmissive portion LTA. The pixeldefining layer PDL containing a light blocking material may be spacedapart without overlapping the light transmissive portion LTA in the planview.

A first functional layer FL1 and a second functional layer FL2 extendingfrom the display portion LDA may be positioned on the light transmissiveportion LTA.

In the light transmissive portion LTA, an end of the second electrode E2extending from the display portion LDA may be disposed on the secondfunctional layer FL2. The second electrode E2 may not be positioned inmost regions of the light transmissive portion LTA. However, the presentinvention is not limited thereto, and the second electrode E2 may beremoved so as to not completely overlap the light transmissive portionLTA in another embodiment.

In addition, a low adhesive layer WAL may be positioned in the lighttransmissive portion LTA. The low adhesive layer WAL may be positionedon the second functional layer FL2 in the light transmissive portionLTA. The low adhesive layer WAL is a material with weak adherence, andas shown in FIG. 10A, the second electrode E2 may not be disposed on anupper surface of the low adhesive layer WAL, or the second electrode E2may include a material having a characteristic in which a very thin filmis formed.

For example, the low adhesive layer WAL may be formed by using amaterial such as 8-quinolinatolithium (Liq; [8-Quinolinolato Lithium]),N,N-diphenyl-N,N-bis(9-phenyl-9H-carbazol-3-yl) Biphenyl-4,4′-diamine(N,N-diphenyl-N,N-bis(9-phenyl-9H-carbazol-3-yl)biphenyl-4,4′-diamine;HT01), N(di-Phenyl-4-yl)9,9-dimethyl-N-(4(9-phenyl-9H-carbazol-3-yl)phenyl)-9H-fluoren-2-amine(N(diphenyl-4-yl) 9,9-dimethyl-N-(4(9-phenyl-9H-carbazol-3-yl)phenyl)-9H-fluorene-2-amine; HT211),24449,10-di(naphthalene)-2-yl)anthracen-2-yl)phenyl)-1-phenyl-1H-benzo-[D]imidazole(2-(4-(9,10-di(naphthalene-2-yl)anthracene-2-yl)phenyl)-1-phenyl-1H-benzo-[D]imidazole;LG201), and the like.

In the present specification, an embodiment in which the low adhesivelayer WAL is positioned in the light transmissive portion LTA to removethe second electrode E2 is illustrated and described, but in anotherembodiment, the second electrode E2 may be removed through a laserprocess or the like. The laser process may be a removal processperformed on the second electrode E2, and in this case, the low adhesivelayer WAL is not positioned on the light transmissive portion.

In the light transmissive portion LTA, a capping layer AL1 and a lowreflective layer AL2, and an encapsulation layer ENC may be disposed onthe low adhesive layer WAL. In particular, the organic encapsulationlayer EOL may have a shape that fills the 1-3 openings OP1-3, and theorganic encapsulation layer EOL may provide a flat top surface.

The first touch insulating layer TIL1 and the second touch insulatinglayer TIL2 may be positioned on the encapsulation layer ENC. The firstconductive layer TIL1 and the second conductive layer TL2 included inthe touch sensor may not overlap the light transmissive portion LTA inthe plan view.

A 2-3 opening OP2-3 defined by the light blocking layer BM may bepositioned on the second touch insulating layer TIL2. The lighttransmissive portion LTA may overlap the 2-3 opening OP2-3 of the lightblocking layer BM in the plan view. The light blocking layer BM may havea form with a part thereof removed from the light transmissive portionLTA. That is, the light transmissive portion LTA may not overlap thelight blocking layer BM that blocks light in the plan view.

The light transmissive portion LTA may overlap a 3-2 opening OP3-2 ofthe reflection adjusting layer OL1 in the plan view. The reflectionadjusting layer OL1 may have a shape with a part thereof removed fromthe light transmissive portion LTA. The reflection adjusting layer OL1having a substantial thickness may be spaced apart from the lighttransmissive portion LTA.

The present specification shows an embodiment in which the reflectionadjusting layer OL1 defines an opening in a form that covers the sidesurface of the light blocking layer BM, but is not limited thereto, andvarious shapes may be possible such that the side surfaces of thereflection adjusting layer OL1 and the light blocking layer BM arealigned to form a single surface, or the reflection adjusting layer OL1may be disposed only on the upper surface of the light blocking layerBM.

The first organic layer OL2 may fill the 3-2 opening OP3-2 of thereflection adjusting layer OL1. The first organic layer OL2 may bepositioned within the 2-3 opening OP2-3 of the light blocking layer BM.The first organic layer OL2 may provide a flat top surface while fillinga plurality of openings. A second organic layer OL3 may be positioned onthe first organic layer OL2.

The second element area EA2 according to the embodiment may include adisplay portion LDA and a light transmissive portion LTA that arealternately disposed. As shown in FIG. 10B, two display portions LDA andtwo light transmissive portions LTA may be repeatedly disposed in amatrix form while forming one unit. However, such an alignment is onlyan embodiment and can be transformed into various forms.

According to the embodiment, since parts of the light blocking layer BMand the reflection adjusting layer OL1 are removed from the lighttransmissive portion LTA, transmittance may be excellent.

Hereinafter, a display device according to another embodiment will bedescribed with reference to FIG. 11A and FIG. 11B. FIG. 11A is across-sectional view of a first element area of a display device, andFIG. 11B is a cross-sectional view of a second element area. Adescription of the above-described constituent elements will be omitted.

Referring to FIG. 11A, a low reflective layer AL2 according to thisembodiment may define an opening OP-AL2 that overlaps a first elementarea EA1 in a plan view. The opening OP-AL2 defined by the lowreflective layer AL2 may overlap a 1-2 opening OP1-2 defined by a pixeldefining layer PDL, a 2-2 opening OP2-2 defined by a light blockinglayer BM, and a 3-1 opening OP3-1 defined by a reflection adjustinglayer OL1 in a plan view. In addition, the opening OP-AL2 defined by thelow reflective layer AL2 may overlap the first organic layer OL2 and thesecond organic layer OL3. In other words, the low reflective layer AL2may have a shape with a part thereof removed from the first element areaEA1.

According to the embodiment, more improved transmittance can be securedby removing a part of the low reflective layer AL2 in the first elementarea EA1.

Referring to FIG. 11B, a low reflective layer AL2 according to thisembodiment may define an opening OP-AL2 overlapping a second elementarea EA2, particularly a light transmissive portion LTA in the planview. The opening OP-AL2 defined by the low reflective layer AL2 mayoverlap a 1-3 opening OP1-3 defined by a pixel defining layer PDL, a 2-3opening OP2-3 defined by a light blocking layer BM, and a 3-2 openingOP3-2 defined by a reflection adjusting layer OL1 in the plan view. Inaddition, the opening OP-AL2 defined by the low reflective layer AL2 mayoverlap the first organic layer OL2 and the second organic layer OL3.That is, the low reflective layer AL2 may have a shape with a partthereof removed from the light transmissive portion LTA.

According to the embodiment, in the light transmissive portion LTA, apart of the low reflective layer AL2 is removed and thus the secondelement area EA2 can secure more improved transmittance.

Hereinafter, referring to FIG. 12A, FIG. 12B, and FIG. 12C, a displaydevice according to still another embodiment will be described. FIG. 12Ais a cross-sectional view of a display area of a display deviceaccording to still another embodiment, FIG. 12B is a cross-sectionalview of a display device including a first element area according tostill another embodiment, and FIG. 12C is a cross-sectional view of thedisplay device including a second element area according to stillanother embodiment. A description of the above-described constituentelements will be omitted.

In embodiments of FIG. 12A, FIG. 12B, and FIG. 12C, a second organiclayer may be removed compared to the embodiments of FIG. 7 , FIG. 9A,and FIG. 10A. According to the embodiment, a first organic layer OL2positioned on a reflection adjusting layer OL1 may be provided in a formthat overlaps a front surface of a substrate SUB in the plan view. Thefirst organic layer OL2 may provide a flat top surface without separateopenings. According to the embodiment, the first organic layer OL2 mayalso overlap the emission layer EML in the plan view. According to suchan embodiment, it is possible to provide a display device with a moresimplified process.

Hereinafter, referring to FIG. 13A and FIG. 13B, a display deviceaccording to yet another embodiment will be described. FIG. 13A is across-sectional view of a display device including a first element areaaccording to yet another embodiment, and FIG. 13B is a cross-sectionalview of a display device including a second element area according toyet another embodiment. A description of the above-described constituentelements will be omitted.

In embodiments of FIG. 13A and FIG. 13B, a second organic layer may beremoved compared to the embodiments of FIG. 11A and FIG. 11B. Accordingto an embodiment, a first organic layer OL2 positioned on a reflectionadjusting layer OL1 may be provided in a form that overlaps a frontsurface of a substrate SUB in the plan view. The first organic layer OL2may provide a flat top surface without separate openings. According tothe embodiment, the first organic layer OL2 may also overlap with anemission layer EML in the plan view. According to such an embodiment, itis possible to provide a display device with a more simplified process.

While this invention has been described in connection with what ispresently considered to be practical embodiments, it is to be understoodthat the invention is not limited to the disclosed embodiments. On thecontrary, it is intended to cover various modifications and equivalentarrangements included within the spirit and scope of the appendedclaims.

<Description of symbols> SUB: substrate E1: first electrode EML:emission layer E2: second electrode AL2: low reflective layer ENC:encapsulation layer BM: light blocking layer OL1: reflection adjustinglayer OL2: first organic layer OL3: second organic layer

What is claimed is:
 1. A display device comprising: a substrate; a lightemitting element which is disposed on the substrate, and includes afirst electrode, an emission layer, and a second electrode; a reflectivelayer which is disposed on the light emitting element, and includes aninorganic material; an encapsulation layer which is disposed on thereflective layer; a light blocking layer which is disposed on theencapsulation layer, and defines a 2-1 opening overlapping the emissionlayer in a plan view; a reflection adjusting layer which is disposed onthe light blocking layer; and a first organic layer which is disposed onthe reflection adjusting layer, and defines an opening overlapping theemission layer in the plan view.
 2. The display device of claim 1,comprising: a display area and a peripheral area which surrounds thedisplay area, wherein the display area comprises a first element areaand a second element area.
 3. The display device of claim 2, furthercomprising: a pixel defining layer which is disposed on the substrate,and includes a light blocking material, wherein the pixel defining layerdefines: a 1-1 opening overlapping at least a part of the firstelectrode in the plan view; a 1-2 opening overlapping the first elementarea in the plan view; and a 1-3 opening overlapping the second elementarea in the plan view.
 4. The display device of claim 3, wherein thelight blocking layer defines: the 2-1 opening overlapping the 1-1opening in the plan view; a 2-2 opening overlapping the 1-2 opening inthe plan view; and a 2-3 opening overlapping the 1-3 opening in the planview.
 5. The display device of claim 4, wherein the reflection adjustinglayer defines: a 3-1 opening overlapping the first element area in theplan view; and a 3-2 opening overlapping the second element area in theplan view.
 6. The display device of claim 5, wherein the first organiclayer is disposed in the 3-1 opening.
 7. The display device of claim 5,wherein the first organic layer is disposed in the 3-2 opening.
 8. Thedisplay device of claim 5, further comprising: a spacer disposed on thepixel defining layer.
 9. The display device of claim 1, furthercomprising a second organic layer disposed on the first organic layer,wherein a refractive index of the second organic layer is greater than arefractive index of the first organic layer.
 10. The display device ofclaim 1, wherein the first organic layer overlaps an entire surface ofthe substrate in the plan view.
 11. The display device of claim 2,wherein the reflective layer comprises ytterbium (Yb), bismuth (Bi),cobalt (Co), molybdenum (Mo), titanium (Ti), zirconium (Zr), aluminum(Al), chromium (Cr), niobium (Nb), platinum (Pt), tungsten (W), indium(In), tin (Sn), iron (Fe), nickel (Ni), tantalum (Ta), manganese (Mn),zinc (Zn), germanium (Ge), silver (Ag), magnesium (Mg), gold (Au),copper (Cu), calcium (Ca), or a combination thereof.
 12. The displaydevice of claim 11, wherein the reflective layer overlaps a frontsurface of the substrate in the plan view.
 13. The display device ofclaim 11, wherein the reflective layer defines an opening which overlapsat least one of the first element area and the second element area inthe plan view.
 14. The display device of claim 1, wherein the reflectionadjusting layer selectively absorbs a first wavelength region and asecond wavelength region in a visible light region, and the firstwavelength region is 480 nanometers (nm) to 505 nm, and the secondwavelength region is 585 nm to 605 nm.
 15. A display device comprising:a substrate comprising a display area and a peripheral area; a lightemitting element which is disposed on the substrate, and includes afirst electrode, an emission layer, and a second electrode; a pixeldefining layer which overlaps at least a part of the first electrode ina plan view, and includes a light blocking material; a reflective layerwhich is disposed on the second electrode, and contains an inorganicmaterial; an encapsulation layer which is disposed on the reflectivelayer; a light blocking layer which is disposed on the encapsulationlayer; and a reflection adjusting layer and a first organic layer whichare disposed on the light blocking layer.
 16. The display device ofclaim 15, comprising: a first element area and a second element areawhich are disposed in the display area.
 17. The display device of claim16, wherein the reflection adjusting layer is spaced apart from thefirst element area and at least a part of the second element area in theplan view.
 18. The display device of claim 16, wherein the first organiclayer overlaps the first element area and the second element area in theplan view, and the pixel defining layer and the light blocking layer arespaced apart from the first element area and the at least a part of thesecond element area in the plan view.
 19. The display device of claim15, wherein the reflective layer overlaps a front surface of thesubstrate in the plan view.
 20. The display device of claim 16, whereinthe reflective layer defines an opening which overlaps the first elementarea and an opening which overlaps the second element area in the planview.